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ED950P Zapytaj o produkt |
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950 nm LED Dice (bare LED Chip), p-side up.
LED Dice Features:
- LED Chip size 365 x 365 μm (14 x 14 mil)
- LED Dice Thickness 280 μm (11 mil)
- Gold cathode / gold anode
- AlGaAs active layer material
- AlGaAs epi layer
- Substrate removed
- Mesa type
- p-side up
LED Dice Electro-Optical Characteristics: - Typical Forward Voltage - 1.25 V
- Maximum Forward Voltage - 1.45 V
- Maximum Reverse Current - 10μA
- Peak Wavelength 950nm
- Minimum Output Power 2.0 mW @ 20 mA
- Typical Output Power 2.5 mW @ 20 mA
- Minimum Output Power 5.0 mW @ 50 mA
- Typical Output Power 6.0 mW @ 50 mA
- Rise time tr 0.5 μs
- Fall time tr 0.5 μs
LED Dice Size/Structure:
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