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ED850N Zapytaj o produkt |
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850 nm LED Dice (bare LED Chip), n-side up. LED Dice Features: - LED Chip size 325 x 325 um (13 x 13 mil)
- LED Dice Thickness 150 um (6 mil)
- Gold cathode / gold anode
- AlGaAs active layer material
- AlGaAs epi layer
- Mesa type
- Substrate Removed
LED Dice Electro-Optical Characteristics: - Typical Forward Voltage - 1.55V
- Maximum Forward Voltage - 1.80V
- Maximum Reverse Current - 10uA
- Peak Wavelength 850nm
- Minimum Output Power 2.5 mW @ 20 mA
- Typical Output Power 3.4 mW @ 20 mA
- Rise time tr 35 ns
- Fall time tr 35 ns
LED Dice Size/Structure:

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